News | TARO HITOSUGI (一杉 太郎)
2012/04/17 Paper written by iwaya san is published IN Appl. Phys. Lett.
The electronic states of silicon donors in a wide gap semiconductor, β-Ga2O3(100), have been studied using low-temperature scanning tunneling microscopy. The results strongly suggest that Si impurities are shallow donors and responsible for the high electrical conductivity of β-Ga2O3.
http://apl.aip.org/resource/1/applab/v98/i14/p142116_s1